A Study on the Structure Properties of Amorphous $As_{40}Se_{50-x}S_{x}Ge_{10}$ Thin Film

비정질 $As_{40}Se_{50-x}S_{x}Ge_{10}$ 박막의 구조특성에 관한 연구

In this paper, we analyze the structure characteristics of $As_{40}Se_{50-x}S_{x}Ge_{10}$ system bulk and thin films. As the results of XRD patterns, it identified amorphous state. In order to find the glass transition temperature($T_g$), crystallization($T_c$) and melting point ($T_m$)of bulk sample, it ascertained that TS1gT is 238$^{\circ}C$ in $As_{40}Se_{15}S_{35}Ge_{10}$, and 231$^{\circ}C$ in $As_{40}Se_{25}S_{25}Ge_{10}$ & $As_{40}Se_{50}Ge_{10}$ following the thernal analysis by DSC, DTA, & TGA method. Also it was confirmed the phase seperation of continuous phase and dispertion phase by the optical texture of polarizing microscope and $T_g$ near 20$0^{\circ}C$ in thin film. Therefore, it was found that it occurs the phase seperation of Ge-rich dontinuous phase and Se-rich dispersion phase following the EDS analysis of thin film and the surface SEM photograph.