Journal of the Korean Vacuum Society (한국진공학회지)
- Volume 1 Issue 1
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- Pages.206-211
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- 1992
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- 1225-8822(pISSN)
Behavior of Oxygen Precipitates during SIMOX SOI Fabrication and Their Influences to the Electrical Property
SIMOX SOI 제조시 산소석출물의 거동과 전지적 특성에 미치는 영향
- Bae, Young-Ho (Semiconductor Device Res Lab. RIST) ;
- Chung, Woo-Jin (Semiconductor Device Res Lab. RIST) ;
- Kim, Kwang-Il (Semiconductor Device Res Lab. RIST) ;
- Kwon, Young-Kyu (Semiconductor Device Res Lab. RIST) ;
- Kim, Bum-Man (Dept. of Electronic Electronical Eng., POSTECH) ;
- Cho, Chan-Sub (Dept. of Electronics KNU) ;
- Lee, Jong-Hyun (Dept. of Electronics KNU)
- Published : 1992.02.01
Abstract
SIMOX SOI structures were formed by oxygen ion implantation with a dose of 2 1018 ions/cm2 at 180kev and post-implantation annealing at
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