Analytical Science and Technology (분석과학)
- Volume 5 Issue 4
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- Pages.455-464
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- 1992
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- 1225-0163(pISSN)
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- 2288-8985(eISSN)
Fourier Transform Infrared Spectroscopic Analysis of the Silylated Resist on Silicon Wafers in Semiconductor Lithographic Process
반도체 사진공정에서 실리콘 웨이퍼 위의 Silylated Resist의 Fourier 변환 적외선 분광분석
- Kang, Sung Chul (Technology Assurenance dept., Manufacturing Engineering Center, semiconductor Business, Samsung Electronics) ;
- Kim, Su Jong (Technology Assurenance dept., Manufacturing Engineering Center, semiconductor Business, Samsung Electronics) ;
- Son, Min Young (Technology Assurenance dept., Manufacturing Engineering Center, semiconductor Business, Samsung Electronics) ;
- Park, Chun Geun (Technology Assurenance dept., Manufacturing Engineering Center, semiconductor Business, Samsung Electronics)
- 강성철 (삼성전자 반도체 생산기술센타 분석기술팀) ;
- 김수종 (삼성전자 반도체 생산기술센타 분석기술팀) ;
- 손민영 (삼성전자 반도체 생산기술센타 분석기술팀) ;
- 박춘근 (삼성전자 반도체 생산기술센타 분석기술팀)
- Published : 1992.12.25
Abstract
Using FT-IR, we determined the depth of silylated layers produced from various gas-phase-silylation conditions was proposed by using Fourier Transform Infrared (FT-IR) spectroscopic analysis. The depth of silylated layer was determined from absorbance measurments of the significant peaks (Si-O-ph, Si-C, Si-H) of FT-IR spectra with background spectrum subtraction method. And the results were compared with thickness measurments of SEM. The results were well agree with SEM. It found to be well suited for determining silylation process window.
본 논문에서는 FT-IR 분광분석법을 이용하여 여러 가지 반응조건에서 기체상 silylation 반응에 의해 생성된 silylated layer의 depth를 비파괴적으로 정량하는 방법을 제안하였다. Silylated layer의 depth는 FT-IR 스펙트럼의 특성 봉우리들(Si-O-ph, Si-C, Si-H)의 흡광도를 바탕 스펙트럼 공제법으로 측정하여 SEM의 두께 측정치와 비교하여 정량하였다. FT-IR 분광분석법을 이용한 Silylated layer의 depth 분석은 비파괴적이고 정량적인 방법으로, 이 방법은 silylation process window를 설정하는 데 적합하다는 것을 알았다.