The Study on the Behavior of TiN Thin Film Growth According to Deposition Pressure in PECVD Process

플라즈마 화학 증착에서 증착압력에 따른 TiN 박막의 성장거동

  • Lee, Z.H. (Department of Metallurgical Engineering, Yonsei University) ;
  • Nam, O.H. (Department of Metallurgical Engineering, Yonsei University) ;
  • Lee, I.W. (Department of Heat Treatment, Suwon Industrial College) ;
  • Kim, M.I. (Department of Metallurgical Engineering, Yonsei University)
  • 이종훈 (연세대학교 금속공학과) ;
  • 남옥현 (연세대학교 금속공학과) ;
  • 이인우 (수원전문대학 열처리과) ;
  • 김문일 (연세대학교 금속공학과)
  • Published : 1992.06.30


In this study, we tried to describe the quantitative model of TiN film structure which was deposited by PECVD process. The macro-grain growth behavior was studied at the various deposition pressures and times. As a result, It was confirmed that TiN films had the typical Zone 1 structure, and macro-columnar grains were, without reference to the deposition pressure, grown ballistic type by the growth-death competition following the equation, $Y=aX^2$, approximately obtained by regression analysis. Also, the thickness and the crystallization of TiN thin films were increased, the chlorine contents were decreased according to the decreasing of deposition pressure.