Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Low Temperature Deposition of TiN on the Steel Substrate by Plasma-Assisted CVD

플라즈마 화학증착에 의한 강재위에 TiN의 저온증착

  • 이정래 (부산대학교 공과대학 무기재료공학과) ;
  • 김광호 (부산대학교 공과대학 무기재료공학과) ;
  • 조성재 (한국표준과학연구원 소재평가센터)
  • Published : 1993.02.01
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Abstract

TiN films were deposited onto high speed steel (SKH9) by plasma assisted chemical vapor deposition (PACVD) using a TiCl4/N2/H2/Ar gas mixture at around 50$0^{\circ}C$. The effects of the deposition temperature, R.F. power and TiCl4 concentration on the deposition of TiN and the microhardness of TiN film were investigated. The crystallinity and the microhardness of TiN films were improved with increase of the deposition temperature. Optimum deposition temperature in this study was 50$0^{\circ}C$, because a softening or phase transformation of the substrate occurred over 50$0^{\circ}C$. A large increase of the film growth rate with a strong(200) preferred orientation was obtained by increasing R.F. power. Much chlorine content of about 10at.% was found in the deposited films and resulted in relatively low average microhardness of about 1, 500Kgf/$\textrm{mm}^2$ compared with the theoretical value(~2, 000Kgf/$\textrm{mm}^2$).

Keywords

References

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