Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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A Study on the Characteristic of PZT Thin Film Deposited on New Buffer Layer by Sputtering

스퍼터링으로 제조한 새로운 완충막 위의 PZT 박막 특성에 관한 연구

  • 주재현 (서울대학교 공과대학 금속공학과) ;
  • 주승기 (서울대학교 공과대학 금속공학과)
  • Published : 1993.04.01
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Abstract

TiN/Ti is the best buffer layer between PZT thin film and si substrate among the Ti, TiN, ZrN, TiN/Ti, ZrN/Ti. The amorphous PZT films deposited on TiN/Ti buffer layer directly transform into perovskite phase when rapid thermal annealed for 30sec above 55$0^{\circ}C$. As Rapid Thermal Annealing(RTA) temperature increased, the remanent polarization(Pr) and dielectric constant($\varepsilon$r) increased and then showed Pr=21 $\varepsilon$r=593 when rapid thermal annealed 80$0^{\circ}C$ for 30sec. On the contrary the leakage current increased with increasing RTA temperature due to the formation of void made by Pb evaporationand grain cohesion.

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References

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