A Study on the Structural Properties of rf Magnetron Sputtered $Ba_{1-x}Sr_xTiO_3$ Thin Film

Rf Magnetron Sputtering 방법으로 제조된 $Ba_{1-x}Sr_xTiO_3$ 박막의 구조적 특성에 대한 연구

  • 김태송 (한국과학기술원 무기재료공학과) ;
  • 오명환 (한국과학기술연구원 이공학연구단) ;
  • 김종희 (한국과학기술원 무기재료공학과)
  • Published : 1993.06.01

Abstract

The Ba1-xSrxTiO3 thin films deposited on ITO-coated glass substrate at 55$0^{\circ}C$ by rf magnetron sputtering method have individual preferential orientations as a function of composition (X=0, 0.25, 0.5, 0.75, 1) due to the stress relief interactions among the intrinsic compressive stress, thermal tensile stress adn extrinsic compressive stress (compressive stress in case of BaTiO3(Tc=12$0^{\circ}C$) and Ba0.75Sr0.25TiO3(Tc=57$^{\circ}C$)). This behavior also appears on the (BaSr)TiO3 thin films (X=0.5) deposited on ITO-coated glass substrate at deposition temperature between 35$0^{\circ}C$ and 55$0^{\circ}C$. The composition of Ba1-xSrxTiO3 thin films deposited on ITO-coated glass substrate at 55$0^{\circ}C$ is close to stoichiometry (1.009~1.089 in A/B ratio), but the compositional deviation from a stoichiometry is larger as SrTiO3 is added. The morphology of Ba1-xSrxTiO3 thin films is very similar for over all substrate temperatures, and the roughness due to the differences of cluster size is the smallest at X=0.25.

Keywords

References

  1. Appl. Phys. Lett. v.56 no.6 Preparation of Ferroelectric BaTiO₃Thin Films by Activated Reactive Evaporation K. Iijma;T.Terashima;K. Yamamoto;K. Hirata;Y. Bando
  2. Jpn. J. Appl. Phys. v.30 no.3 Epitaxial Growth of Srх-TiO and Fabrication of $EuBa_2Cu_3O_{7-\delta}/Sr_хTiO_у/Pb$ Tunnel Junctions O. Michikami;M. Asahi
  3. J. Appl. Phys. v.48 no.7 Some Electrical and Optical Properties of Ferroelectric Lead-Zirconate-Lead Titanate Thin Films A. Okada
  4. J. Appl. Phys. v.60 no.1 Preparation of C-axis Oriented PbTiO₃Thin Films and Their Crystallographic, Dielectric, and Phyroelectric Properties K. Iijma;Y. Tomita;R. Takayama;I. Ueda
  5. J. Appl. Phys. v.67 no.6 The Self-biased Heterojunction Effect of Ferroelectric Thin Film on Silicon Substrate Y. Xu;CJ. Chen;R. Xu;J.D. Mackenzie
  6. J. Electrochem. Soc. v.111 no.12 Preparation and Properties of Thin Barum Titanate Films A.E. Feucrsanger;A.K. Hagenlocher;A.L. Solomon
  7. Thin Solid Films v.208 The Growth Process and Certain Ferroelectric Properties of Heteroepotaxial ($Ba_{1-x}Sr_х$)TiO₃/MgO (001) Thin Films Z. Surowiak;Y.S. Nikitin;S.V. Biryukov;L.I. Golovko;V.M. Mukhortov;V.P. Dudkevich
  8. MRS Symposium Proceeding v.202 Microstructure of Thin Films Grown By Reduced-Pressure CVD P.C. Van Buskirk;R. Gardiner;P.S. Kirlin
  9. Appl. Phys. Lett. v.55 no.2 Epitaxial Growth of Thin Films of BaTiO₃using Eximer Laser Ablation G.M. Davis;G.C. Gower
  10. J. Appl. Phys. v.64 no.5 Preparation fo Pb(Zr, Ti)O₃Thin Films by Sol Gel Processing: Electrical, Optical, and Electro-optic Properties G. Yi;Z. Wu;M. Sayer
  11. Jpn. J. Appl. Phys. v.28 no.L Preparation of BaTiO₃Thin Film by Hydrothermal Electrochemical Method M. Yoshimura;S. Yoo;M. Hayashi;N. Ishizawa
  12. Active and Passive Thin Film Devices D.S. Campbell;T.J. Coults(ed.)
  13. J Vac. Sci. & Technol. v.16 no.2 Characterization of Amorphous Barium Titanate Films Prepared by rf Sputtering D.J. McClure;J.R. Crue
  14. J. Vac. Sci. & Technol v.A8 no.3 Growth and Properties of Piezoelectric and Ferroelectric Films M.H. Francombe;S.V. Krishnaswamy
  15. Proc. SID v.25 Thin-film Electroluminescent Displays: Device Characteristics and Performance P.M. Alt
  16. J Appl. Phys. v.60 no.2 Ferroelectric (Pb, La)(Zr, Ti)O₃Epitxial Thin Films on Sapphire grown by rf-planar Magnetron Sputtering H. Adachi;Y. Mitsuya;O. Yamazaki;K. Wasa
  17. Mat. Sci. & Eng. v.A22 Acoustic Lenses Empolying PZT Thin Film Transducers C.K. Jen;C. Neron;G. Yi;M. Sayer;M. Castronguay;J.D.N. Cheeke
  18. スベソタ技術 和佐淸孝;早川茂
  19. Ferroelectrics v.37 Fabrication of BaTiO₃Films by Planar-magnetron Sputtering T. Nagatomo;T. Kosaka;S. Omori;O. Omoto
  20. Thin Solid Films v.176 The Influence of BaTiO₃and (BaSr)TiO₃Thin Films with a Diffuse Phase Transition Z. Surowiak;A.M. Margolin;I.N. Zakharochenoko;S.V. Biryukov
  21. Jpn. J. Appl. Phys. v.21 no.5 Energy Analysis of High-Energy Neutral Atoms in the Sputtering of ZnO and BaTiO₃ K. Tominaga;S. Iwamura;Y. Shitani;O. Tada
  22. J. Vac. Sci. & Technol v.20 no.3 Modification of Niobium Film Stress by Low-energy Ion Bombardment during Deposition I.J. Cuomo;J.M.E Harper;C.R.Guarnieri;D.S. Yee;L.J. Attanasio;J. Angileloo;C.T. Wu
  23. MRS Symposium Proceeding v.200 Stresses in Ferroelectric Thin Films S.B. Desu
  24. J. Voc. Sci. & Technology v.20 no.3 Internal Stresses in Cr, Mo, Ta, and Pt Films Deposited by Sputtering from a Planar Magnetron Sources D.W. Hoffman;J.A. Thorton
  25. J. Appl. Phys. v.66 no.12 Preparation of Epitaxial ABO₃Perovskite-type Oxide Thin Films on a (100)MgAl₂O₄/Si Substrate S. Matsubara;S. Miura;Y. Miyasaka;N. Shohata
  26. MRS Symposium Proceeding v.202 Microstructural Changes duringk Processing of Laser Deposited BaTiO₃and PZT Thin Films L.P. Cook;M.D. Vaudin;P.K. Schenck;W. Wong-ng;C.K. Chiang;S.P. Brody
  27. Ferroeletric and Related Substances a Oxides K.H. Hellwege(ed.);A.M. Hellwege(ed.)
  28. J. Appl. Phys. v.58 no.4 Dielectric fo Fine-grained Barium Titanate Ceramics G. Arlt;D.Hennings;G. de. With
  29. Thin Solidk Films v.169 Growth of BaTiO₃-SrTiO₃Thin Films by R.F Magnetron Sputtering K. Fujimoto;Y. Kobaashi;K. Kubata
  30. J. Appl. Phys. v.34 Thermal Expansion of Indeium Oxide R.L. Weiher;R.P. Ley
  31. J. Am. Ceram. Soc. v.30 no.4 Properties of Barium-Strontium Titanate Dielectrics E.N. Bunting;G.R. Shelton;A.S. Creamer