References
- J. Electrochem. Soc v.127 no.737 T.T. Sheng;R.B. Marcus
- 6th Microscopy of Semiconducting Materials, Proc. Inst. Phys. Conf. v.100 no.501 E.C.G. Kirk;D.A. Williams;H. Ahmed
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Korean Journal of Materials Research (한국재료학회지)
- Volume 3 Issue 2
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- Pages.193-196
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- 1993
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- 1225-0562(pISSN)
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- 2287-7258(eISSN)
Cross-sectional TEM Specimens Priparation of Precisely Selected Regions of Semiconductor Devices using Focused Ion Beam Milling
- Kim, Jeong-Tae (Semiconductor Research and Development Lab) ;
- Kim, Ho-Jeong (Semiconductor Research and Development Lab) ;
- Jo, Yun-Seong (Semiconductor Division) ;
- Choe, Su-Han (Semiconductor Research and Development Lab)
- Published : 1993.04.01
Abstract
A procedure for preparing cross-sectional specimens for transmission electron microscopy(TEM)by focused ion beam(FIB)milling of specific regions of semiconductor devices is outlined. This technique enables TEM specimens to be pripared at precisely preselected area. In-situ #W thin film deposition on the top surface of desired site is complementally used to secure the TEM specimens to be less wedge shaped, which is main shortcoming of previous FIB-assisted TEM sample preparation technique. This technique is quite useful for the TEM sample priparation for fault finding and the characterization of fabrication process associated with submicron contact technologies.
Keywords