Korean Journal of Materials Research (한국재료학회지)
- Volume 3 Issue 6
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- Pages.593-597
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- 1993
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- 1225-0562(pISSN)
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- 2287-7258(eISSN)
Studies on the Adhesion of W to TiN(II)
TiN에 대한 W의 부착특성에 관한 연구(II)
-
Lee, Jong-Mu
(Dept.of Metallurgical Engineering, Inha University)
;
- Gwon, Nan-Yeong (Dept.of Metallurgical Engineering, Inha University) ;
- Lee, Jong-Gil (Samsung Electronics Corporation)
- Published : 1993.12.01
Abstract
Adhesion of CVD W to the TiN glue layer in the blanket W process which is a promising candidate for filing contact holes in subhalfmicron ULSIs has been investigated. The adhesion was enhanced with increasing the W film thickness due to the decrease of the TiN film stress. The adhesion strength was increased by the sputter etching of the TiN surface prior to the W deposition owing to the removal of contaminants and the increase of the surface roughness. The adhesion of the W film to the TiN glue layer property was also improved by Ar ion implantation of the TiN surface owing to the activation of the TiN surface.
Subhalfmicron ULSI의 컨택홀을 메꾸는 기술로 각광받고있는 전면도포(blanket W)법에서 부착특성고양층(glue layer)인 TiN막에대한 CVD-W의 부착특성을 조사하였다. 부착강도는 텅스텐막의 두께가 증가함에 따라 TiN막내의 응력의 감소로 인해 부착특성이 향상되었다. TiN막표면을 스퍼터 에칭하는 진처리를 실시할 경우 막표면의 불순물 제거, 표면 거칠기 증가등의 효과로 부착특성이 개선되었다. 또한 TiN막표면에 Ar이온 주입에 의한 손상을 줄 경우에도 TiN막 표면이 활성화되어 부착특성이 향상되었다.
Keywords