Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 30A Issue 1
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- Pages.44-50
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- 1993
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- 1016-135X(pISSN)
A Study on the double-layered dielectric films of tantalum oxide and silicon nitride formed by in situ process
연속 공정으로 형성된 탄탈륨 산화막 및 실리콘 질화막의 이중유전막에 관한 연구
Abstract
In an attempt to improve the electrical characteristics of tantalum pentoxide dielectric film, silicon substrate was reacted with a nitrogen plasma to form a silicon nitride of 50.angs. and then tantalum pentoxide thin films were formed by reactive sputtering in the same chamber. Breakdown field and leakage current density were measured to be 2.9 MV/cm and 9
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