Improvement of Migration Lifetime by Dual-sized Grain Structure in 1% Si-Al Metal Line

이중 결정립 구조 1%Si-Al 금속선에 의한 Migration 수명의 개선

  • 김영철 (서울시립대학교 전자공학과) ;
  • 김철주 (서울시립대학교 전자공학과)
  • Published : 1993.06.01

Abstract

After the 1%S-Al metal is deposited, a thin oxide is formed thereon. Then, a single charged Argon(Ar$^{+}$) is ion implanted into the oxide layer, thereby causing the metal grain in the upper surface of the metal layer to become amorphous. Consequently, the grain size will be reduced and the rough surface of the metal layer flattened. However, the remainder of the metal layer beneath the upper surface thereof will still exhibit large grain size and low resistance, because the Argon ion is only implanted to characterized by a dual-sized grain structure which served to reduce interlayer stress, thereby decreasing the rate of stress migration, and to lower the resistivity of the metal line, thereby enhancing the electromigration characteristic thereof. Experiments have shown that the metal line exhibits a metal migration rate which is approximately 700% less than the control group and a standard deviation which is approximately 200% less than these group.p.

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