전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제30A권6호
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- Pages.14-21
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- 1993
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- 1016-135X(pISSN)
a-Si:H/a SiN:H 구조 MODFET의 제조 및 그 특성
Fabrication of MODFET with a-Si:H/a-Sin:H Structure and Its Characteristics
초록
MODFETs using the heterostructure of phosphorous-contained a-SiN:H: and undoped a-Si:H films have been fabricated by PECVD of SiH
키워드