Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on the Zone Melting Recrystallization of Sequentially Evaporated InSb Thin Films for Improvement of the Electron Mobility

순차 증착한 InSb 박막의 전자 이동도 향상을 위한 대용융 재결정에 관한 연구

  • 김병윤 (서울대학교 금속공학과) ;
  • 현규택 (서울대학교 금속공학과) ;
  • 주승기 (서울대학교 금속공학과)
  • Published : 1993.06.01
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Abstract

InSb thin films were fabricated by zone melting recrystallization of In/Sb multilayered thin films prepared by sequential evaporation. Unreacted metal phase or dispersed metal precipitates lowered the electron mobility and the electron mobility increased with development of (111) prefered orientation. Properties of the film could be controlled by changing mzximum temperature and scanning speed, and the electron mobility as high as 12, 000 cm $^2$/Vsec could be obtained under the optimized conditions.

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