A Study on the Degradation Mechanism due to FN Tunneling Carrier in MOS Device

MOS 소자의 FN 터널링 캐리어에 의한 성능 저하에 관한 연구

Device degradations by the Fowler-Nordheim tunneling have been studide. The changes of device characteristics such as the threshold voltage, subthreshold slope, I-.or. curves have been measured after bidirectionally stressing n-channel MOSFET's and p-channel MOSFET's. Also the interface states have been directly measured by the charge pumping methodIt is shown that the change of interface states is determined by the number of hole carriers tunneling the gate oxide and electrons which are trapped in the gate oxide. Also, in this paper, we propose a model for device lifetime limited by the increase of interface states.