A DC~7GHz Ultrabroad-Band GaAs MESFET

DC~7GHz 초광대역 GaAs MESFET 증폭기

An analytic approach to wide-band amplification using simplified equivalent MESFET modeling has enabled an ultrabroad-band flat-gain amplifier from DC to microwave. The developed lossy-match ultrabroad-band amplifier operates as a RC coupled circuit in the low-frequency range and lossless impedance matching circuit in the microwave frequency range with gain compensation circuits. The reduced gain caused by external resistors is compensated using 2-stage cascade amplification, and the gain of designed unit is 12.5.+-.1dB from the vicinity of DC to 7GAz. The experimental gain characteristics are good agreement with computer simulated results. The input and output VSWRs are measured under 2:1 over the operating frequency range, and the gain goes down over 15dBrange with various gate bias voltages.