Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Lifetime Prediction Modeling for PMOSFET degraded by Hot-Carrier (I)

Hot-Carrier로 인한 PMOSFET의 소자 수명시간 예측 모델링(I)

  • 정우표 (연세대학교 전자공학과) ;
  • 류동렬 (연세대학교 전자공학과) ;
  • 양광선 (연세대학교 전자공학과) ;
  • 박정태 (인천대학교 전자공학과) ;
  • 김봉렬 (연세대학교 전자공학과)
  • Published : 1993.08.01
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Abstract

In this paper, we present a new lifetime prediction model for PMOSFET by using the correlation between transconductance degradation and substrate current influence. The suggested model is applied to a different channel structured PMOSFET, dgm/gm of both SC-PMOSFET and BC-PMOSFET appear with one straigth line about Qbib, therefore, this model is independent of channel structure. The suggested model is applied to a different drain structured SC-PMOSFET. Unlike S/D structured SC-PMOSFET, dgm/gm of LDD structured SC-PMOSFET appears with one straight line about Qb, therefore, this model is dependent of drain structure.

Keywords