Verification of the steady-state Nyquist theorem by Monte-Carlo method in n-i-n structures

N-I-N 구조에서 Monte-Carlo 방법에 의한 steady-state Nyquist 정리의 검증

To verify validity of the steady-state Nyquist theorem and the steady-state Nyquist theorem with hot carrier effects in semiconductor devices, we calculate thermal noise in n-i-n structures using both the steady-state Nyquist theorem and the Monte-Carlo method, and compare the results from these two-methods. When the carrier temperature is not far from the lattice temperature, the results from both methods agree with each other very well, but in the hot carrier regime there are some discrepancies. Our results support the argument that for MOSFETs and MESFETs operating in the linear region, the channel thermal noise should be explained by the steady-state Nyquist theorem rather than by the existing theories.