A Fabrication and Characteristics of 16x8 Reflection Type Symmetric Self Electro-optic Effect Device Array

16x8 반사형 S-SEED 어레이 제작 및 특성

  • 김택무 (포항공과대학 전자전기공학과 / 산업과학기술연구소) ;
  • 이승원 (포항공과대학 전자전기공학과 / 산업과학기술연구소) ;
  • 추광욱 (포항공과대학 전자전기공학과 / 산업과학기술연구소) ;
  • 김석태 (포항공과대학 전자전기공학과 / 산업과학기술연구소) ;
  • 정문식 (포항공과대학 전자전기공학과 / 산업과학기술연구소) ;
  • 김성우 (포항공과대학 전자전기공학과 / 산업과학기술연구소) ;
  • 권오대 (포항공과대학 전자전기공학과 / 산업과학기술연구소) ;
  • 강봉구 (포항공과대학 전자전기공학과 / 산업과학기술연구소)
  • Published : 1993.10.01

Abstract

A reflection type 16x8 S-SEED array from LP(Low Pressure)-MODVD-grown GaAs/AlGaAs extremely shallow quantum well(ESQW) structures, with 4% Al fraction, has been fabricated. Its intrinsic region consists of 50 pairs of alternating 100.angs. GaAs and 100.angs. $Al_{0.04}$Ga$_{0.96}$As layers. A multilayer reflector stack of $Al_{0.04}$/Ga$_{0.96}$ As(599$\AA$)/AlAs(723$\AA$) was incorporated for the reflection plane below the p-i-n structures. The device processing after the MOCVD growth includes the mesa etching, isolation etching, insulator deposition, p & n metallization, and AR(Anti-Reflection) coating. For switching characteristics of the S-SEED in the form of p-i-n ESQW diode, the maximum optical negative resistance was observed at 856nm. Reflectance measurements showed a change from 15.6% to 43.3% for +0.9V to -6V bias. The maximum contrast ration of the S-SEED array was 2.0 and all the 128 devices showed optical bistability with contrast ratios over 2.4 at 5V reverse bias.

Keywords