A Study on the Characteristics of PSA Bipolar Transistor with Thin Base Width of 1100 ${\AA}$

1100 ${\AA}$의 베이스 폭을 갖는 다결정 실리콘 자기정렬 트랜지스터 특성 연구

This paper describes the fabrication process and electrical characteristics of PSA (Polysilicon Self-Align) bipolar transistors with a thin base width of 1100.angs.. To realize this shallow junction depth, one-step rapid thermal annealing(RTA) technology has been applied instead of conventional furnace annealing process. It has been shown that the series resistances and parasitic capacitances are significantly reduced in the device with emitter area of 1${\times}4{\mu}m^{2}$. The switching speed of 2.4ns/gate was obtained by measuring the minimum propagation delay time in the I$^{2}$L ring oscillator with 31 stages.