Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Electrical Characteristics of the Poly-Si TFT using SPC Films after Si Ion Implantation

실리콘 이온 주입 후 고상 결정화 시킨 다결정 실리콘 TFT의 전기적 특성

  • Lee, Byoung-Ju (Dept. of Elec. Eng., Sogang Univ.) ;
  • Kim, Jae-Yeong (Dept. of Elec. Eng., Sogang Univ.) ;
  • Kang, Moun-Sang (Dept. of Elec. Eng., Sogang Univ.) ;
  • Koo, Yong-Seo (Dept. of Computer Eng., Seokyeong Univ.) ;
  • An, Chul (Dept. of Elec. Eng., Sogang Univ.)
  • 이병주 (서강대학교 전자공학과) ;
  • 김재영 (서강대학교 전자공학과) ;
  • 강문상 (서강대학교 전자공학과) ;
  • 구용서 (서경대학교 컴퓨터공학과) ;
  • 안철 (서강대학교 전자공학과)
  • Published : 1993.10.01
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Abstract

N-channel TFTs fabricated on the pre-amorphized (by Si ion implantation) and recrystallized Si film having 10.1V threshold voltage, 20.7cm$^{2}$/V$\cdot$s field effect mobility and ~10$^{5}$/ ON/OFF ratio, whowed improved characteristics comparing to those obtained from the as-deposited (by LPCVD) poly Si film which had 11.2V, 9cm$^{2}$/V$\cdot$s and ~10$^{4}$ respectively.

Keywords