Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Formation Conditions of PZT Thin Films for ULSI -A study on the formation and characteristics of PZT thin films by rapid thermal annealing-

초고집적 회로용 PZT 박막의 형성조건 -스퍼터링법으로 Si, TiN/Ti/Si 기판위에 증착된 PZT 박막의 급속 열처리에 의한 결정화 및 특성-

  • 마재평 (호남대학교 전자공학과) ;
  • 박치선 (한양대학교 재료공학과) ;
  • 백수현 (한양대학교 재료공학과) ;
  • 황유상 (한양대학교 재료공학과) ;
  • 백상훈 (한양대학교 재료공학과) ;
  • 최진성 (삼성전자 반도체부문 기흥연구소) ;
  • 조현춘 (산업 기술연구원)
  • Published : 1993.10.01
Download PDF
⟨ Previous Next ⟩

Abstract

PZT thin film deposited by rf magnetron sputtering was annealed by rapid thermal process(RTP) in PbO ambient to prevent vaporing of Pb and interface reactions. Si and TiN/Ti/Si substrates were prepared to survey application of TiN/Ti layer which can prevent interface interaction with Si and crack of PZT thin films. As temperature increased. PZT thin films surface on Si substrate appeared more severe cracks which should affect electrical properties deadly. TiN/Ti(40-150${\mu}{\Omega}{\cdot}cm$) layer applied for buffer layer suppressed interface interaction and film cracking. The measured leakage current(LC) and breakdown voltage(BV) of PZT thin film on TiN/Ti/Si substrate annealed at 650$^{\circ}$C for 15 sec (thickness of 2500$\AA$) were 38 nA/cm2 and 3.5 MV/cm and dielectric constant was 310 at 1 MHz, and remanent polarization (Pr) and coercive field (Ec) were 6.4${\mu}C/cm^{2}$ and 0.2MV/cm at 60 Hz, respectively.

Keywords