A Study on the Contamination of D.I. Water and its Effect on Semiconductor Device Manufacturing

초순수의 오염과 반도체 제조에 미치는 영향에 대한 연구

  • 김흥식 (금성 일렉트론 주식회사) ;
  • 유형원 (금성 일렉트론 주식회사) ;
  • 윤철 (금성 일렉트론 주식회사) ;
  • 김태각 (금성 일렉트론 주식회사) ;
  • 최민성 (금성 일렉트론 주식회사)
  • Published : 1993.11.01

Abstract

We analyzed the D.I. water used in wet cleaning process of semiconductor device manufacturing both at the D.I. water plant and at the wafer cleaning bath to detect the impurity source of D.I. water contamination. This shows that the quantity of impurity is related to the resistivity of D.I. water, and we found that the cleanliness of the wafer surface processed in D.I. water bath was affected by the degree of the ionic impurity contamination. So we evaluated the cleaning effect as different method for Fe ion, having the best adsoptivity on wafer surface. Moreover the temperature effect of the D.I. water is investigated in case of anion in order to remove the chemical residue after wet process. In addition to the control of D.I. water resistivity, chemical analysis of impurity control in D.I. water should be included and a suitable cleaning an drinsing method needs to be investigated for a high yielding semiconductor device.

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