Hot-Carrier Induced GIDL Characteristics of PMOSFETs under DC and Dynamic Stress

직류 및 교류스트레스 조건에서 발생된 Hot-Carrier가 PMOSFET의 누설전류에 미치는 영향

  • 류동렬 (연세대학교 전자공학과) ;
  • 이상돈 (연세대학교 전자공학과) ;
  • 박종태 (인천대학교 전자공학과) ;
  • 김봉렬 (연세대학교 전자공학과)
  • Published : 1993.12.01

Abstract

PMOSFETs were studied on the effect of Hot-Carrier induced drain leakage current (Gate-Induced-Drain-Leakage). The result turned out that change in Vgl(drain voltage where 1pA/$\mu$m of drain leadage current flows) was largest in the Channel-Hot-Hole(CHH) injection condition and next was in dynamic stress and was smallest in electron trapping (Igmax) condition under various stress conditions. It was analyzed that if electron trapping occurrs in the overlap region of gate and drain(G/D), it reduces GIDL current due to increment of flat-band voltage(Vfb) and if CHH is injected, interface states(Nit) were generated and it increases GIDL current due to band-to-defect-tunneling(BTDT). Especially, under dynamic stress it was confirmed that increase in GIDL current will be high when electron injection was small and CHH injection was large. Therefore as applying to real circuit, low drain voltage GIDL(BTDT) was enhaced as large as CHH Region under various operating voltage, and it will affect the reliablity of the circuit.

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