A Study on the Defect Annealing of Hafnium Metal By Positron Annihilation Techniques

양전자소멸기법을 이용한 하프늄금속의 격자결함 회복에 관한 연구

Positron annihilation characteristics and microhardness of 25% cold worked and isochronally annealed hafnium specimens were measured to study recovery and recrystallization stages of hafnium specimens. The annihilation lifetime of positrons in hafnium has been measured for the distinct cases of annihilation in the annealed lattice and annihilation after trapping at lattice defects generated by cold deformation at room temperature. The annihilation lifetime in the annealed lattice was 187 $\pm$3.7 psec, whereas it was 217 $\pm$ 4.2 psec for positrons trapped at deformation-induced defects (mostly dislocations). The changes in Doppler broadening and hardness showed similar trend in the recrystallization range, however, the measured value of Doppler broadening variation were quite sensitive to changes in the recovery region in which the variation in hardness value was completely insensitive. Recovery of cold worked hafnium initiated at about 623 K and recrystallization occurred at around 1023 K.

소둔시편 및 소둔 후 냉간가공한 하프늄시편에 대하여 양전자수명을 조사하였다. 소둔시편에서의 양전자수명은 187$\pm$3.7 psec인 반면, 소둔 후 냉간가공한 시편에서 격자결함에 포획된 양전자의 수명은 217$\pm$4.2 psec로 측정되었다. 양전자소멸측정 및 미세경도측정 방법을 이용하여 등시소둔에 의한 냉간가공시편의 회복 및 재결정 거동을 조사하였다. 재결정단계에서는 양전자소멸측정 과 미세경도측정값이 유사한 경향을 나타냈으나, 회복단계에서는 양전자소멸측정값이 매우 현저하게 변화하는 반면, 미세경도값은 거의 변화하지 않았다. 하프늄의 회복단계는 623 K부터 시작되며 재결정온도는 1023 K정도로 측정되었다.