한국결정성장학회지 (Journal of the Korean Crystal Growth and Crystal Technology)
- 제4권1호
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- Pages.11-20
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- 1994
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- 1225-1429(pISSN)
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- 2234-5078(eISSN)
MBE 성장온도에 따른 GaAs 및 AlGaAs의 전기광학적 특성
Growth and characterization of GaAs and AlGaAs with MBE growth temperature
- Seung Woong Lee (Semiconductor Materials Laboratory, Korea Institute of Science and Technology, Seoul 136-791, Korea) ;
- Hoon Young Cho (Semiconductor Materials Laboratory, Korea Institute of Science and Technology, Seoul 136-791, Korea) ;
- Eun Kyu Kim (Semiconductor Materials Laboratory, Korea Institute of Science and Technology, Seoul 136-791, Korea) ;
- Suk-Ki Min (Semiconductor Materials Laboratory, Korea Institute of Science and Technology, Seoul 136-791, Korea) ;
- Jung Ho Park (Department of Electronics Engineering, Korea University, Seoul 136-791, Korea)
- 발행 : 1994.03.01
초록
분자선에피택시(molecular beam epitaxy)법을 이용하여 GaAs 및 ALGaAs layer를 undoped 반절연(100) GaAs 기판위에 성장하였고, 최적의 성장온도와 성장된 시료에 대한 전기적 및 광학적 특성을 조사 하였다. Undoped GaAs층의 성장에 있어서는 측정결과로 부터 As/Ga의유속비가 약 20, 성장온도가
GaAs and AlGaAs epi-layers were grown on semi-insulating (100) GaAs substrate by molecular beam epitaxy (MBE) and their electrical and optical properties have been investigated by several measurements. In undoped GaAs, the p-type GaAs layers with the good surface morphology were obtained under the growth conditions of the substrate temperatures ranging from 570 to
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