Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Low temperature growth of silicon thin film on sapphire substrate by liquid phase epitaxy for solar cell application

사파이어 기판을 사용한 태양전지용 실리콘 박막의 저온액상 에피탁시에 관한 연구

  • Soo Hong Lee (Photovoltaic Device Lab., Materials & Devices Research Center, Samsung Advanced Institute of Technology, Suwon 440-600, Korea) ;
  • Martin A. Green (Center for Photovoltaic Devices and Systems, University of New South Wales, Kensington N.S.W. 2033, Australia)
  • Published : 1994.06.01
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Abstract

Deposition of silicon on pretreated sapphire substrates has been investigated by the liquid phase epitaxy method at low temperatures. An average 14 $\mu\textrm{m}$ thickness of silicon was grown over a large area on sapphire substrate originally coated with a much thinner silicon layer $[0.5 \mu\textrm{m} (100) Si/(1102) sapphire]$ at low temperatures from $(380^{\circ}C to 460^{\circ}C)$.

$[0.5 \mu\textrm{m} (100) Si/(1102) sapphire]$ 기판상에 액상 에피탁시 방법으로 태양전지용 실리콘 박막형성을 시도하여, 평균 14 $\mu\textrm{m}$ 두께의 실리콘 박막을 아주 낮은 온도범위 $(380^{\circ}C~460^{\circ}C)$에서 성장시켰다.

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