Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Highly Oriented Textured Diamond Film on Si Substrate

Si 기판과 일정방향관계를 갖는 근사단결정 다이아몬드 박막 합성

  • 백영준 (한국과학기술연구원 세라믹스연구부) ;
  • 은광용 (한국과학기술연구원 세라믹스연구부)
  • Published : 1994.04.01
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Abstract

The growth condition of highly oriented textured diamond film on a (100) Si substrate was investigated as a function of texture orientation. The growth process consisted of biased enhanced nucleation (BEN) and texture growth. The substrate was under the plasma of 6% CH4-94% H2 with negative bias of 200V during the BEN which grounded during the texture growth. The texture orintation changed from <100> to <110> by increasing substrate temperature. The nearly perfect match between textured diamond grains and the Si substrate could be obtained under the condition of <100> texture. The degree of tilt mismatch increased with the increase of deviation of texture orientation from <100>. The degree of twist mismatch appeared to increase abruptly beyond the critical deviation of texture orientation from <100> because the nuclei having the same orientation as the substrate were no more preferred grains for texture formation.

Keywords

References

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