Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
권호 표지

Thermal Oxidation Behavior and Electrical Characteristics of Silicon depending on the Crystal Orientation

결정 배향에 따른 Si의 열산화 거동 및 전기적 특성

  • 우현정 (연세대학교 세라믹공학과) ;
  • 최두진 (연세대학교 세라믹공학과) ;
  • 양두영 ((주)금성 일렉트론 반도체연구소)
  • Published : 1994.07.01
Download PDF
⟨ Previous Next ⟩

Abstract

(100) Si and 4$^{\circ}$off (100) Si were oxidized in dry oxygen, and the differences in thermal oxidation behavior and electrical characteristics between two specimens were investigated. Ellipsometer measurements of the oxide thickness produced by oxidation in dry oxygen from 1000 to 120$0^{\circ}C$ showed that the oxidation rates of the 5$^{\circ}$ off (100) Si were more rapid than those of the (100) Si and the differences between them decreased as the oxidation temperature increased. The activation energies based on the parabolic rate constant, B for (100) and 4$^{\circ}$off (100) Si were 25.8, 28.6 kcal/mol and those on the linear rate constant, B/A were 56.8, 54.9 kcal/mol, respectively. Variation of C-V characteristics with the oxidation temperature showed that the flat band voltages were shifted positively and surface state charge densities decreased as the oxidation temperature increased, and the surface state charge density of the 4$^{\circ}$off (100) Si was lower than that of the (100) Si. Also considerable decrease in the density of oxidation induced stacking faults (OSF) for the 4$^{\circ}$off (100) Si was observed through optical microscopy after preferentially etching off the oxide layer.

Keywords

References

  1. J. Appl. Phys. v.36 General Relationship for the Thermal Oxidation of Silicon B.E. Deal;A.S. Grove
  2. J. Electrochem. Soc. v.110 Oxidation of Silicon in Dry Oxygen, Wet Oxygen, and Steam B.E. Deal
  3. VLSI Technology(2nd Ed.) S.K. Ghandhi
  4. J. Appl. Phys. v.45 Formation of Stacking Faults and Enhanced Diffusion in the Oxidation of Silicon S.M. Hu
  5. Appl. Phys. Lett. v.33 Elimination of Stacking Fault Formation in Silicon by Preoxidation Annealing in N₂/HCI/O₂ Mixture T. Hattori;T. Suzuki
  6. J. Electrochem. Soc. v.123 Elimination of Stacking Faults in Silicon by Trichloroethylene Oxidation T. Hattori
  7. J. Appl. Phys. v.42 Effect of Crystal Orientation on the Stacking Fault Formation in Thermally Oxidized Silicon Y. Sugita;T. Gato;M. Tamura
  8. J. Phys. Chem. v.65 Effect of Crystal Orientation on Oxidation Rates of Silicon in High Pressure Steam J.R. Ligenza
  9. J. Electrochem. Soc. v.126 Defect Etch for <100> Silicon Evaluation D.G. Schiminel
  10. J. Am . Cer. Soc. v.48 Diffusion of Oxygen in Fused Silica E.L. Williams
  11. Modular Series on Solid State Devices v.Ⅴ Introduction to Microelectronic Fabrication R.C. Jaeger;G.W. Neudeck(ed.);R.F. Pierret(ed.)
  12. Nature v.191 no.701 Permeation of Gaseous Oxygen Through Vitrector Silica F.J. Norton
  13. VLSI Technology(2nd Ed.) S.M. Sze;S.W. Director(Ed.)
  14. Modular Series on Solid State Devices(2nd Edition) v.Ⅳ Field Effect Devices R.F. Pierret;R.F. Pierret(ed.);G.W. Neudeck(ed.)