Effect of $Si_3N_4$ Addition on the Microstructure and PTCR Characteristics in Semiconducting $BaTiO_3$ Ceramics

반도성 $BaTiO_3$ 세라믹스의 미세구조 및 PTCR 특성에 미치는 $Si_3N_4$ 첨가효과

  • 김준수 (한국에너지기술연구소 에너지재료연구팀) ;
  • 정윤해 (명지대학교 공과대학교 무기재료공학과) ;
  • 이병하 (명지대학교 공과대학교 무기재료공학과)
  • Published : 1994.10.01

Abstract

The effect of Si3N4 addition on the microstructure and PTCR characteristics of BaTiO3 was studied. When 0.1 mol% Sb2O3-doped BaTiO3 codoped with Si3N4 (0.1, 0.25, 0.5, 0.75, and 1 wt%, respectively) were sintered, their microstructures were changed by the amount of the liquid phase as a result of eutectic reaction at 126$0^{\circ}C$. By these microstructural changes, the specific resistivity ratio($\rho$max/$\rho$min) with Si3N4 content variation of 0.1 mol% Sb2O3-doped BaTiO3 ceramics sintered at 130$0^{\circ}C$ for 1 hour varied between 3.70$\times$102(0.1 wt% Si3N4) to 1.16$\times$103 (1wt% Si3N4).

Keywords

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