Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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$TiO_2$ Doped Sapphire Single Crystal Growth by Verneuil Method and Study for Defects

Verneuil법에 의한 $TiO_2$를 첨가한 Sapphire 단결정 성장과 결함에 관한 연구

  • Cho, H. (Dept. of Inorganic Materials Eng., Hanyang University) ;
  • Choi, J.K. (Dept. of Inorganic Materials Eng., Hanyang University) ;
  • Chun, B.S. (Dept. of Inorganic Materials Eng., Hanyang University) ;
  • Orr, K.H. (Dept. of Inorganic Materials Eng., Hanyang University) ;
  • Park, H.S. (Hongik University, College of Science and Technology, Dept. of Inorganic Materials Eng)
  • 조현 (한양대학교 공과대학 무기재료공학과) ;
  • 최종건 (한양대학교 공과대학 무기재료공학과) ;
  • 전병식 (한양대학교 공과대학 무기재료공학과) ;
  • 오근호 (한양대학교 공과대학 무기재료공학과) ;
  • 박한수 (홍익대학교 과학기술대학 무기재료공학과)
  • Published : 1994.12.01
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Abstract

TiO2 doped sapphire single crystals were grown by Verneuil method. The doping amount of TiO2 to Al2O3 were varied 0.1, 0.2, 0.3 wt% respectively. The grown crystals have reddish color and somewhat transparent. Optimum growth condition was established by changing growth rate and gas flow ratio. Growth condition are as follows; The flow rate range of oxygen ws 5.0~7.3 ι/min and that of hydrogen was 16~25ι/min and average growth rate was 6~8mm/hr. The basic cause of color appearence and defects in crystal were studied.

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References

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