Electrical Conduction Mechanisms of $RuO_2$ Based Thick Film Resistor

$RuO_2$계 후막저항체의 전기전도기구

  • 구본급 (대전산업대학교 재료공학과) ;
  • 김호기 (한국과학기술원 무기재료공학과)
  • Published : 1994.12.01

Abstract

Electrical conduction mechanisms of RuO2-based thick film resistors were investigated with frequency depandence on AC conductivity. Electrical conduction mechanisms of lower resistivity system (100{{{{ OMEGA }}/sq) sintered at 600~90$0^{\circ}C$ were all metallic conduction mechanism. In case of higher resistivity (10K{{{{ OMEGA }}/sq) system, the electrical conduction mechanisms were very depenent on sintering temperature. When sintering temperature was $600^{\circ}C$, the electrical conduction mechamism was ionic, and as increasing the sintering temperature, the electrical conduction mechanism was changed from ionic to hopping conduction mechanism.

Keywords

References

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