Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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An Analytical Models for Substrate Current and Gate Current Using Modified Lateral Electric Field Model for Surface-Channel PMOSFET's

수정된 수평 전개 모델을 이용한 SC-PMOSFET의 기판 전류와 게이트 전류의 해석적 모델

  • 양광선 (연세대학교 전자공학과) ;
  • 박종태 (인천대학교 전자공학과) ;
  • 김봉렬 (연세대학교 전자공학과)
  • Published : 1994.01.01
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Abstract

In this paper, we present the analytical models for substrate current and gate current of stressed SC-PMOSFET using the change of the lateral electric field distribution due to the trapped electron. Calculated Isub and Ig of stressed SC-PMOSFET agree with experimental data. Our model can be very useful explaining the logarithmic time dependence of Isub and Ig. and also the trapped electron distribution.

Keywords