전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제31A권1호
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- Pages.61-64
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- 1994
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- 1016-135X(pISSN)
E-beam lithography를 이용한 0.1$\mu\textrm{m}$ NMOSFET 제작
The Fabrication of the 0.1$\mu\textrm{m}$ NMOSFET by E-beam Lithography
초록
The NMOSFET with gate length of 0.1
키워드