Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication and Characteristics of Schottky Diodes using the SDB(Silicon Direct Bonded) Wafer

SDB 웨이퍼를 사용한 쇼트키아이오드의 제작 및 특성

  • 강병로 (아주대학교 전자공학과) ;
  • 윤석남 (아주대학교 전자공학과) ;
  • 최영호 (대우전자부품 Hybrid IC팀) ;
  • 최연익 (아주대학교 전자공학과)
  • Published : 1994.01.01
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Abstract

Schottky diodes have been fabricated using the SDB wafer, and their characteristics have been investigated. For comparison, conventional planar and etched most structure were made on the same substrate. The ideality factor and barrier height of the fabricated devices are found to be 1.03 and 0.77eV, respectively. Breakdown volttge of the etched mesa Schottky diode has been increased to 180V. whereas it is 90V for the planar diode. Schottky diode with an etched mesa exhibits twice improvement in breaktown voltage.

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