Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Study for Digital Logic Circuit Using Resonant Tunneling Diodes

공명투과다이오드를 이용한 논리회로의 응용 연구

  • 추혜용 (한국전자통신연구소 기초기술연구실) ;
  • 박평운 (한국전자통신연구소 기초기술연구실) ;
  • 이창희 (한국전자통신연구소 광통신연구부) ;
  • 이일항 (한국전자통신연구소 기초기술연구실)
  • Published : 1994.02.01
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Abstract

AlAs/GaAs/AlAs RTDs(Resonant Tunneling Diodes) are fabricated and current-voltage properties of them are measured. At room temperature, peak to valley ratio is 2.4 NOT.AND.OR logic gates and Flip-Flop are fabricated using the bistable characteristics of RTDs. Although NOT.AND.OR logic gates need 5~8 transistors. only one RTD is sufficient to fabricate the logic gates. Since the switching time is very short(<10$^12$sec), it is possible to drive the semiconductor circuits fast and integrate them very large. And it is convinced the possibility of integrating RTDs to multilevel logic circuits by observing two peaks of similar current in the serial connection of two RTDs.

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