Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on Ion Shower Doping in Si Thin Film

이온 도핑 방법에 의한 실리콘 박막의 도핑 연구

  • Yoo, Soon-Sung (Dept. of Physics and Research Inst. For Basic Science, Kyung Hee University) ;
  • Jun, Jung-Mok (Dept. of Physics and Research Inst. For Basic Science, Kyung Hee University) ;
  • Lee, Kyung-Ha (Dept. of Physics and Research Inst. For Basic Science, Kyung Hee University) ;
  • Moon, Byeong-Yeon (Dept. of Physics and Research Inst. For Basic Science, Kyung Hee University) ;
  • Jang, Jin (Dept. of Physics and Research Inst. For Basic Science, Kyung Hee University)
  • 유순성 (경희대학교 물리학과 및 기초과학연구소) ;
  • 전정목 (경희대학교 물리학과 및 기초과학연구소) ;
  • 이경하 (경희대학교 물리학과 및 기초과학연구소) ;
  • 문병연 (경희대학교 물리학과 및 기초과학연구소) ;
  • 장진 (경희대학교 물리학과 및 기초과학연구소)
  • Published : 1994.05.01
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Abstract

We have developed a large area ion shower doping system with an RF plasma ion source. The ion current density (i.e., doping concentration) increases with RF power and acceleration voltage. Using this technique, we investigated the optimum condition for ion doping of phosphorus in a-Si:H and poly-Si films. The optimum acceleration voltage and doping time are 6KV and 90sec, respectively, in a-Si:H films. Under this condition the electrical conductivity of ion-doped a-Si:H film is obtained ~10$^{-3}$/cm at room temperature. The sheet resistance decreases witnh acceleration voltage in ion-doped poly-Si, and a heavily-doped layer with a sheet resistance of 920$\Omega$/ㅁ is obtained by using ion doping and subsequent activation.

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