Journal of the Korean Institute of Telematics and Electronics A (μ „μžκ³΅ν•™νšŒλ…Όλ¬Έμ§€A)

The Institute of Electronics and Information Engineers (λŒ€ν•œμ „μžκ³΅ν•™νšŒ)
ꢌ호 ν‘œμ§€

The Threshold Voltage and the Effective Channel Length Modeling of Degraded PMOSFET due to Hot Electron

Hot electron에 μ˜ν•˜μ—¬ λ…Έμ‡ ν™”λœ PMOSFET의 λ¬Έν„±μ „μ••κ³Ό 유효 채널길이 λͺ¨λΈλ§

  • 홍성택 (μ‹œλ¦½ μΈμ²œλŒ€ν•™κ΅ μ „μžκ³΅ν•™κ³Ό) ;
  • λ°•μ’…νƒœ (μ‹œλ¦½ μΈμ²œλŒ€ν•™κ΅ μ „μžκ³΅ν•™κ³Ό)
  • Published : 1994.08.01
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Abstract

In this paper semi empirical models are presented for the hot electron induced threshold voltage shift(${\Delta}V_{t}$) and effective channel shortening length (${\Delta}L_{H}$) in degraded PMOSFET. Trapped electron charges in gate oxide are calculated from the well known gate current model and Ξ”LS1HT is calculated by using trapped electron charges. (${\Delta}L_{H}$) is a function of gate stress voltage such as threshold voltage shift and degradation of drain current. From the correlation between (${\Delta}L_{H}$) has a logarithmic function of stress time. From the measured results, (${\Delta}V_{t}$) and (${\Delta}L_{H}$) are function of initial gate current and device channel length.

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