Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 31A Issue 10
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- Pages.71-78
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- 1994
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- 1016-135X(pISSN)
Rabrication of 4.7 V Operation GaAs power MESFETs and its characteristics at 900 MHz
900MHz 대역 4.7 V 동작 전력소자 제작 및 특성
Abstract
We have developed GaAs power metal semiconductor field effect transistors (MESFETs) for 4.7V operation under 900 MHz using a low-high deped structures grown by molecular beam epitaxy (MBE). The fabricted MESFETs with a gate widty of 7.5 mm and a gate length of 1.0.mu.m show a saturated drain current (Idss) of 1.7A and an uniform transconductance (Gm) of around 600mS, for gate bias ranged from -2.4 V to 0.5 V. The gate-drain breakdown voltage is measured to be higher than 25 V. The measured rf characteristics of the MESFETs at a frequency of 900 MHz are the output power of 31.4 dBm and the power added efficiency of 63% at a drain bias of 4.7 V.
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