Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Low-resistance ohmic contacts to p-$Hg_{0.7}$$Cd_{0.3}$Te

p-$Hg_{0.7}$$Cd_{0.3}$Te에 낮은 저항의 접촉을 얻는 방법에 대한 연구

  • Kim, Kwan (Dept. of Elec. Eng., Korea Advanced institute of Science and Technology) ;
  • Chung, Han (Dept. of Elec. Eng., Korea Advanced institute of Science and Technology) ;
  • Kim, Sung-Chul (Dept. of Elec. Eng., Korea Advanced institute of Science and Technology) ;
  • Lee, Hee-Chul (Dept. of Elec. Eng., Korea Advanced institute of Science and Technology) ;
  • Kim, Choong-Ki (Dept. of Elec. Eng., Korea Advanced institute of Science and Technology) ;
  • Kim, Hong-Kook (Agency for Defence Development) ;
  • Kim, Jae-Mook (Agency for Defence Development)
  • 김관 (한국과학기술원 전기 및 전자공학과) ;
  • 정한 (한국과학기술원 전기 및 전자공학과) ;
  • 김성철 (한국과학기술원 전기 및 전자공학과) ;
  • 이희철 (한국과학기술원 전기 및 전자공학과) ;
  • 김충기 (한국과학기술원 전기 및 전자공학과) ;
  • 김홍국 (국방과학연구소) ;
  • 김재묵 (국방과학연구소)
  • Published : 1994.10.01
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Abstract

Ohmic contacts between Au and p-HgHg_{0.7}Cd_{0.3}Te$ with low specific contact resistance have been obtained. The contact region of the wafer is first pre-heated for 5 seconds in a rapid thermal processing equipment. The temperature reaches a maximum value of about 200$^{\circ}C$ at the end of the 5 seconds. Next, a thin Au film is formed on the contact region by immersing the sample in AuCl$_{3}$ solution. the sample is then post-annealed in the same condition as the pre-heating after Pb/In pad metals are deposited on the electroless Au contacts. The specific contact resistance measured by transmission line model is 5${\times}10^{-3}{\Omega}cm^{2}$ at 80K. RBS and differential Hall measurement data suggest that the above low resistance ohmic contact is ascribed to surface traps and increased gold diffusion rate.

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