Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Selectrive chemical vapor deposition of aluminum for the metallization of high level IC

고집적회로 금속선 형성을 위한 화학증작 알루미늄의 선택적 증착

  • 이경일 (서울대학교 금속공학과) ;
  • 김영성 (서울대학교 금속공학과) ;
  • 주승기 (서울대학교 금속공학과)
  • Published : 1994.12.01
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Abstract

Aluminum films were deposited by the pyrolysis of triisobutylaluminum(TIBA) in a cold wall LPCVD system for the metallization of high level IC. the selectivity on Si/SiO2 substrate and the contact resistance on submicron contacts were investigated. The carbon free aluminum film could be obtained when the aluminum film was deposited at low substrate temperature. Contact resistances of CVD Al/n+ Si contacts whose contact size was 0.5 .mu.m werre as low as 20~40.OMEGA./ea, which is 30~50% of contact resistance obtained by sputtering technique.

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