Spiking characteristics of the CVD aluminum plugged on silicon direct contacts

알루미늄/실리콘 직접 접촉창에 증착된 화학 증착 알루미늄의 스파이킹 특성

Aluminum films were chemically vapor deposited for the metallization of the integrated circuits and the spiking characteristics of the direct CVD Al/Si contacts were investigated. When the aluminum was formed by CVD uniform consumption of the substrate silicon was observed, which is quite different from the phenomena observed in sprttered Al. Silicon consumption occured during the deposition of CVD Al and the erosion depth of the silicon was several hundred $\AA$ when the continuous films were formed on the substrate while much less erosion of the silicon occured when the Al were formed in islands. When the submicron contacts were selectively plugged, contact resistances were very low and the erosion depth of the silicon was trivial.