초크랄스키법에 의한 실리콘 단결정성장에서 회전효과가 미치는 영향에 대한 연구

Effects of Rotation on the Czochralski Silicon Single Crystal Growth

The influence of varying rotation speed of both crystal and crucible was numerically investigated for the Czochralski silicon-crystal growth. Based on a simplified model assuming flatness of free surfrae, the Navier-Stokes Boussinesq equations were employed to identify the flow pattern, temperature distribution as well as the shape of the melt/crystal interface. The present results showed that the interface shape was relatively convex with respect to the melt at lower pulling rate and tended to be concave as the pulling rate increased. In particular, the experimentally observed gull-winged shape of the interface was qualitatively in agreement with the predicted shape. The rotation of crystal alone little affected the growth system. When the rotation speed of the crucible was increased, there occurred inversion of the interface shape from convex to concave pattern. At rapid rotation of the crucible, an interesting channel formation was predictied primarily due to the assumption of laminar flow.