Abstract
'#65279;We made $P_2O_5-SiO_2$ films on silicon for integrated optics application by low pressure chemical vapor deposition using TEOS(tetraethylorthosilicate), TMPite(trimethylphosphite) and phosphine($PH_3$). And We studied and compared between TMPite and PH, as a dopant of P in PSG films in the aspect of the de,position characteristics. Deposition rate of TMPate-PSG films was $55 \AA/min$ which was smaller than 90 A/min , that of $PH_3-PSG$ films. Thickness deviation of TMPate-PSG films was 2% and that of PH3-PSG was 4.5%. So TMPate-PSG films had a good quality in thickness uniformity. The range of refractive index was controlled from 1.445 to 1.468 at 633 nm in TMPate-PSG films and it was controlled from 1.456 to 1.476 in $PH_3-PSG$ films.
Low Pressure Chemical Vapor Deposition으로 TEOS, TMPate, $PH_{3}$을 이용하여 Si을 기판으로한 집적광학용 $P_{2}$$O_{5}$ $-SiO_{2}$(PSG)박막을 만들었으며 P첨가제인 TMPate와 P $H_{3}$의 사용에 따른 증착률, 굴절률, 균일도 등의 특성을 조사 및 비교하였다. TMPate에 의한 PSG박막은 증착률이 $55 \AA/min$으로 $PH_{3}$에 의한 PSG박막의 값인 90.angs./min보다 작았으며 상대적으로 TMPate-PSG의 두께 균일도는 2%로 $PH_3-PSG$의 값인 4.5%보다 작아 균일도면에서 훨씬 우수하였다. TMPate-PSG의 굴절률은 파장 633nm에서 1.445-1.468 이였으며 $PH_3-PSG$는 1.459-1.476으로 TMPate-PSG 보다 높은 굴절률 값을 얻을 수 있었다.
