6H - SiC single crystal growth by sublimation process

승화법에 의한 SiC 단결정 육성

Abstract 6 H - SiC single crystal was grown by sublimation growth system which was self - designed and manufactured. In order that the SiC source might be decomposited and sublimed and deposited on the 6H - seed substrate grown by Acheson method, the temperature gradient, the growth parameters of growth temperature and pressure were operately adjusted. So we could get the optimum temperature gradient inside of the crucible. The graphite crucible with SiC powder and thermal shield componants were purified at the elevated temperature by means of Ar purging process and the source baking, then it distributed to reduce the amount of the impurities come from those parts. It was recognized that the optimum growth temperature of the crucible was$2300~2400^{\circ}C$ at the Ar atmospheric pressure of 200~400 torr, and at that moment the growth rate was 500~1000 $\mu\textrm{m}$. And then, the as- grown crystal was cut with the wafer form, the evaluation about the crystal was carried out by XRD, the optical microscopic observation and FT IR spectrum measurement.

자체 제작된 승화법에 의한 결정성장 장치를 이용하여, 6H-SiC 단결정을 성장하였다. Acheson 법으로 얻어진 6H 결정을 seed substrate로 사용하였으며, SiC source 로부터 분해된 승화 증기가 seed상에서 육성되도록 흑연 도가니내의 온도구배 및 성장온도와 압력을 유기적으로 조절하였다. 성장 전 graphite 도가니 구성부와 SiC 원료에 대한 purification을 행함으로써 성장결정 내부로의 불순물 혼입이 억제되도록 하엿다. 결정 성장시의 육성조건으로 도가니 바닥의 온도는 $2300~2400^{\circ}C$였으며, 성장로 내부의 분위기 압력은 200~400 torr에서 양질의 단결정을 얻을 수 있었다. 성장된 결정을 두께 1.5 mm의 wafer로 제작하여 XRD와 optical microscope로 관찰하였고, FT-IR spectrum으로 분석하였다.