Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
권호 표지

Characteristics of Oxynitride Dielectics Prepared in $N_2O$ Ambient by Furnace

Furnace로 $N_2O$ 분위기에서 성장시킨 Oxynitride 절연막 특성

  • 이은구 (조선대학교 재료공학과) ;
  • 박인길 (한국과학기술원 전자세라믹재료 연구센터) ;
  • 박진성 (조선대학교 재료공학과)
  • Published : 1995.01.01
Download PDF
⟨ Previous Next ⟩

Abstract

(100) Si was oxidized in N2O ambient, and the film properties of oxynitride dielectrics were compared with pure SiO2. The growth rate, after pre-oxidation in O2/N2 ambient with raising temperature, is faster than that of O2/N2O treatment during the same condition. Nitrogen piles up at the interface of SiO2 and Si substrate and the content is about 2atom%. Comparing with pure SiO2, oxynitride dielectrics shows less dielectric breakdown failures and flat-band voltage shift, and good diffusion barrier property to dopant(BF2) is also observed.

Keywords

References

  1. IEDM 90 High Performance dual-gate sub-halfmicron CMOSFETs with 6nm-thick Nitried SiO₂Films in N₂O Ambient A. Uchiyama;H. Fukuda;T. Hayashi;S. Ohno
  2. Intended Abstracted the 22nd(1990 International) Conference on SOLID STATE DEVICES and MARERIALS Highly Reliable Thin Nitrided SiO₂ Films Formed by Rapid Thermal Processing in an N₂O ambient H. Fukuda;T. Arakwa;S. Ohno
  3. IEDM90 Electrical and Reliability Characteristics of Ultra Oynitride Gate Dielectric Prepared by Rapid Thermal Processing in N₂O Ambient H. Hwang;W. Ting;D. Kwong;J. Lee
  4. MOS Physics and Technology E.H. Nicollian;J.R. Brews
  5. Kor. J. Matls Research v.2 no.4 Material and Electrical Characteristics of Oxynitride Gate Dielectrics prepared in N₂O ambient by RTP J.S. Park;W.S. Lee;T.E. Shim;J.G. Lee
  6. Kor. J. Matls Research v.3 no.1 Oxidation Reaction of Silicon Oxide Fabricated by Rapid Thermal Process in N₂O Ambient J.S. Park;W.S. Lee;T.E. Shim
  7. IEDM 1986 Oxidebreakdown Dependence on Thickness and Hole Current I.C. Chen;S. Holland;C. Hu
  8. IEDM91 Electron Trapping in Very Thin Thermal Silicon Oxides M. Songling;C. Hu