Characterization of Electrical Properties of $Ba_{0.65}Sr_{0.35}TiO_3$Thin Films Deposited by RF Magnetron Sputtering

RF 마그네트론 스퍼터링법에 의해 증착된 $Ba_{0.65}Sr_{0.35}TiO_3$ 박막의 전기적 특성 분석

  • 양기덕 (서울대학교 무기재료공학과) ;
  • 조호진 (서울대학교 무기재료공학과) ;
  • 조해석 (서울대학교 무기재료공학과) ;
  • 김형준 (서울대학교 무기재료공학과)
  • Published : 1995.04.01

Abstract

Ba0.65Sr0.35TiO3 (BST) thin films were deposited on Pt/SiO2/Si(100) substrate by rf magnetron sputtering. The substrate temperature changed from 35$0^{\circ}C$ to 55$0^{\circ}C$ and crystalline BST thin films were deposited above 45$0^{\circ}C$. Most of the films had (111) preferred orientation regardless of deposition temperature, but the films changed to (100) preferred orientation as gas pressure increased. The dielectric constant increased with increasing substrate temperature and film thickness, and ranged from 100 to 600 at room temperature. The leakage current increased as substrate temperature increased or as film thickness decreased.

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References

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