The Microstructure Control of SiC Ceramics Containing Porcelain Scherben

자기파를 함유한 SiCwlf 세라믹스의 미세구조 제어

  • 이성희 (홍익대학교 무기재료공학과)
  • Published : 1995.05.01

Abstract

The SiC-porcelain powder mixtures containing 51.9wt% SiC are produced as by-products from the surface abrasion process of porcelain cores. This raw powders were used as starting materials for the synthesis of SiC containing ceramics. The specimen, which was fired at 135$0^{\circ}C$ from raw powders, had SiC, $Al_{2}O_{3}$, , cristobalite, mullite as crystalline phases, and the fractured microstructure showed dispersed SiC crystalline particles almost wetted with glassy matrix and spherical pores. Although the oxidation of SiC containing powder compacts wetted with glassy matrix and spherical pores. Although the oxidation of SiC containing powder compacts started at the range of 600~80$0^{\circ}C$ form the analysis of weight gain, the presence of $SiO_{2}$ crystallien phase and cristobalite was confirmed at 100$0^{\circ}C$ by XRD analysis. Mullitization of specimens was accelerated by preheating before the final firing. The specimen sintered at 135$0^{\circ}C$ after 100$0^{\circ}C$ preheating consisted of SiC, cristobalite, mullite as crystalline phases, and revealed 2.24g/$cm^{3}$ bulk density, 11.73% water adsorption, porous microstructure with small amount of glassy phase. SiC contents of specimens, which was 51.9 wt% in the raw powders, reduced to 37~22 wt% after firing at 135$0^{\circ}C$ depending on the preheating condition.

SiC를 51.9wt% 함유한 SiC-자기질 혼합 분말이 자기 코아의 표면연마 공정에서 부산물로 발생한다. 이 원료 분말을 SiC질 세라믹스를 제조하기 위한 출발물질로 하였다. 원료자체로 성형 $1350^{\circ}C$에서 열처리하면 SiC, $Al_{2}O_{3}$, cristoblite, mullite 결정상이 존재하면 미세구조는 SiC 입자를 유리질 매트릭스가 덮고 있고 구형 기공이 존재한다. 원료 성형체를 열처리시 시편 무게 증가에 의해 판단되는 SiC의 산화는 600~$800^{\circ}C$ 범위에서 시작하나 XRD 분석에 의해서는 $1000^{\circ}C$ 열처리에 이르러서야 $SiO_{2}$의 cristobalite 결정상을 확인하였다. 예비 열처리 후에 소성한 시편은 mullite화 반응이 촉진되는데, $1000^{\circ}C$의 예비 열처리 후 $1350^{\circ}C$에서 소성한 시편은 SiC, cristobalite, mullite가 결정상으로 존재하며, 밀도 2.24g/$cm^{3}$, 흡수율 11.73%이고 유리상이 적고 다공성인 미세구조를 갖는다. 원료 자체에서 51.9wt%이던 SiC 함량은 $1350^{\circ}C$ 소성시편에서는 예비 열처리 조건에 따라 약 37~22%로 감소한다.

Keywords

References

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