Electrical and Optical Properties of ZnO : Al Films Prepared by the DC Magnetron Sputtering System

직류 Magnetron Sputter 법으로 제막된 ZnO : Al 박막의 전기광학 특성

  • 김의수 (한국유리공업주식회사 기술연구소) ;
  • 유세웅 (한국유리공업주식회사 기술연구소) ;
  • 유병석 (한국유리공업주식회사 기술연구소) ;
  • 이정훈 (한국유리공업주식회사 기술연구소)
  • Published : 1995.07.01

Abstract

Transparent conductive films of aluminium doped zinc oxide (AZO) have been prepared by using the DC magnetron sputtering with the ZnO : Al (Al2O3 2 wt%) oxide target oriented to c-axis. Electrical and optical properties depended upon the O2/Ar gas ratio. The optical transmittance and sheet resistance of the AZO coated glass was 60~65% and 75Ω/$\square$, respectively at the O2/Ar gas ratio of 0. With the increase of the oxygen partial pressure to 2.0$\times$10-2, they were increased to the values of 81% and 1kΩ/$\square$, respectively. The films with the resistivities of 1.2~1.4$\times$10-3 Ω.cm, mobilities of 11~13 $\textrm{cm}^2$/V.sec and carrier concentrations of 3.5$\times$1020~4.0$\times$1020/㎤ were produced at the optimum O2/Ar gas ratio, which was 0.5$\times$10-2~1.0$\times$10-2. According to XRD analysis, the films have only one peak corresponding to the (002) plane, which indicates that there is a strong preferred orientation of the films. The grain size of ZnO films were calculated to 200~320 $\AA$, which was increased with the O2/Ar gas ratio and Ar gas flowrate.

Keywords

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