Abstract
A high-resolution transmission electron microscopy study on the lattice defects formed in the high energy P ion implanted silicon was carried out on an atomic level. Results show that Lomer dislocations, 60$^{\circ}$perfect dislocations, 60$^{\circ}$ dislocation dipole and extrinsic stacking fault formed in the near Rp of as-implanted specimen. In the annelaed specimens, interstitial Frank loops, 60$^{\circ}$perfect disolations, 60$^{\circ}$dislocation dipoles, stacking faults, precipitates, perfect dislocation loops and <112> rodlike defects existed exclusively near in the Rp with various annealing temperature and time. From these results, it is concluded that extended secondary defects as well as the point defect clusters could be formed without annealing. Even at low temperature annealing such as 55$0^{\circ}C$, small interstitial Frank loops could be formed and precipitates were also formed by $700^{\circ}C$ annealing. The defect band annealed at 100$0^{\circ}C$ for 1 hr could be divided into two regions depending on the distribution of the secondary defects.
