Abstract
The stress in Permalloy thin films fabricated by rf magnetron sputtering on the Si (100) substrates has been investigated with various deposition parameters such as the film thickness, argon pressure, and rf power. The internal stress changes from compressive to tensile with higher input power and argon pressure. The cause of stress variations with these deposition parameters is discussed in terms of thermal and/or intrinsic stress changes. Low coercive force is obtained from Permalloy thin films at a condition of low compressive stress.
